Detecting the cleanness of wafer after post-CMP cleaning

ABSTRACT

A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a divisional of U.S. patent application Ser. No.14/986,905, entitled “Detecting the Cleanness of Wafer after Post-CMPCleaning,” filed on Jan. 4, 2016, which application is incorporatedherein by reference.

BACKGROUND

Chemical mechanical Polish (CMP) processes are widely used in thefabrication of integrated circuits. When an integrated circuit is builtup layer by layer on the surface of a semiconductor wafer, CMP processesare used to planarize the topmost layer to provide a planar surface forsubsequent fabrication steps. CMP processes are carried out polishingthe wafer surface against a polish pad. A slurry containing bothabrasive particles and reactive chemicals is applied to the polish pad.The relative movement of the polish pad and wafer surface coupled withthe reactive chemicals in the slurry allows the CMP process to planarizethe wafer surface by means of both physical and chemical forces.

CMP processes can be used for the fabrication of various components ofan integrated circuit. For example, CMP processes may be used toplanarize inter-level dielectric layers and inter-metal dielectriclayers. CMP processed are also commonly used in the formation of thecopper lines that interconnect the components of integrated circuits.

After a CMP process, the surface of the wafer, on which the CMP processhas been performed, is cleaned to remove residues. The residues mayinclude organic matters and particles. In recent generations ofintegrated circuits, the sizes of the integrated circuit devices arereduced to a very small scale. This posts a demanding requirement to thepost-CMP cleaning than for older generations of integrated circuits. Forexample, the sizes of the metal particles that remain after the post-CMPcleaning cannot exceed a half of the critical dimension (the gatelength) of the transistors on the wafer. Obviously, with the reductionof the sizes of the integrated circuit devices, such requirement istightened.

In the post-CMP cleaning, brushes were used to remove the residues onthe wafers. After the post-CMP cleaning, wafers are inspected, forexample, by determining the brightness of the cleaned wafer to determinewhether there is residue left or not.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates Chemical Mechanical Polish (CMP) process inaccordance with some embodiments.

FIGS. 2 and 3 illustrate top views of wet processes in a post-CMPcleaning process in accordance with some embodiments.

FIG. 4 illustrates determining the cleanness of a wafer using laserparticle counter in accordance with some embodiments.

FIG. 5 illustrates determining the cleanness of a wafer using dynamiclaser scattering in accordance with some embodiments.

FIG. 6 illustrates determining the cleanness of a wafer using FourierTransform Infrared Spectroscopy (FTIR) spectrum in accordance with someembodiments.

FIGS. 7A and 7B illustrate some exemplary FTIR spectrums in accordancewith some embodiments.

FIG. 8 illustrates determining the cleanness of a wafer using Ramanspectrum in accordance with some embodiments.

FIGS. 9A and 9B illustrate some exemplary Raman spectrums in accordancewith some embodiments.

FIG. 10 illustrates determining the cleanness of a wafer usingspectrometer in accordance with some embodiments.

FIG. 11 illustrates exemplary transmittance and reflectance graphs ofsilicon in accordance with some embodiments.

FIG. 12 illustrates determining the cleanness of a wafer usingellipsometer in accordance with some embodiments.

FIGS. 13 and 14 illustrate exemplary amplitude and phase difference,respectively, of some exemplary wafer surfaces in accordance with someembodiments.

FIG. 15 illustrates determining the cleanness of a wafer by measuringsurface charge in accordance with some embodiments.

FIGS. 16A and 16B illustrate measuring the surface charge of wafers withdifferent surface conditions in accordance with some embodiments.

FIG. 17 illustrates a process flow of a CMP process and the post-CMPcleaning in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the invention. Specificexamples of components and arrangements are described below to simplifythe present disclosure. These are, of course, merely examples and arenot intended to be limiting. For example, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed between the first and second features, such thatthe first and second features may not be in direct contact. In addition,the present disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “underlying,” “below,”“lower,” “overlying,” “upper” and the like, may be used herein for easeof description to describe one element or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. Thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

A process for determining the cleanness and the end point of postChemical Mechanical Polish (CMP) cleaning is provided in accordance withvarious exemplary embodiments. Some variations of some embodiments arediscussed. Throughout the various views and illustrative embodiments,like reference numbers are used to designate like elements.

FIGS. 1-6, 8, 10, 12, 15, 16A and 16B illustrate the cross-sectionalviews of intermediate stages in a CMP process and the post-CMP cleaningin accordance with some embodiments. The steps shown in 1-6, 8, 10, 12,15, 16A and 16B are also illustrated schematically in the process flow500 shown in FIG. 17. In the subsequent discussion, the process stepsshown in of the CMP process and the post-CMP cleaning are discussedreferring to the process steps in FIG. 17.

FIG. 1 schematically illustrates the CMP of a wafer in accordance withsome embodiments of the present disclosure. The respective step is shownas step 502 in the process flow shown in FIG. 17. CMP system 10 includespolishing platen 12, polishing pad 14 over polishing platen 12, andpolishing head 16 over polishing pad 14. Slurry dispenser 20 has anoutlet directly over polishing pad 14 in order to dispense slurry ontopolishing pad 14.

During the CMP, slurry 22 is dispensed by slurry dispenser 20 ontopolishing pad 14. Slurry 22 includes a reactive chemical(s) that reactwith the surface layer of wafer 18. Furthermore, slurry 22 includesabrasive particles for mechanically polishing wafer 18.

Polishing pad 14 is formed of a material that is hard enough to allowthe abrasive particles in slurry 22 to mechanically polish wafer 18,which is under polishing head 16. On the other hand, polishing pad 14 isalso soft enough so that it does not substantially scratch wafer 18.During the CMP process, polishing platen 12 is rotated by a mechanism(not shown), and hence polishing pad 14 fixed thereon is also rotatedalong with polishing platen 12. The mechanism (such as a motor and/or agear) for rotating polishing pad 14 is not illustrated.

During the CMP process, polishing head 16 is also rotated, and hencecausing the rotation of wafer 18 fixed onto polishing head 16. Inaccordance with some embodiments of the present disclosure, polishinghead 16 and polishing pad 14 rotate in the same direction (clockwise orcounter-clockwise). In accordance with alternative embodiments, as shownin FIG. 1, polishing head 16 and polishing pad 14 rotate in oppositedirections. The mechanism for rotating polishing head 16 is notillustrated. With the rotation of polishing pad 14 and polishing head16, slurry 22 flows between wafer 18 and polishing pad 14. Through thechemical reaction between the reactive chemical in the slurry and thesurface layer of wafer 18, and further through the mechanical polishing,the surface layer of wafer 18 is planarized.

After the CMP, wafer 18 is cleaned through a post-CMP cleaning step. Thepost-CMP cleaning step may include a plurality of steps including andnot limited to, cleaning using an acidic chemical solution, cleaningusing an alkaline chemical solution, cleaning using a neutral chemicalsolution, and rinsing with De-ionized water (DI water). The post-CMPcleaning may also include a plurality of cycles, each including achemical solution cleaning step and a rinsing step.

FIGS. 2 and 3 illustrate the wet processes in the post-CMP cleaning. Therespective step is shown as step 504 in the process flow shown in FIG.17. FIG. 2 illustrates a top view of the post-CMP cleaning and therespective cleaning apparatus 30 in accordance with some embodiments.Wafer 18, which has been undertaken the CMP process, has residues lefton the surface of wafer 18, and the residues need to be removed fromwafer 18. The residues may include organic matters and particles. Inaccordance with some embodiments, during the wet processes, wafer 18 isplaced vertically. In accordance with alternative embodiments, wafer 18is placed horizontally.

The cleaning apparatus 30 includes brush 32, which may be formed ofPolyvinyl Alcohol (PVA), Polyvinyl chloride (PVC), Benzotriazole (BTA),or the like in accordance with some embodiments of the presentdisclosure. Furthermore, Brush 32 may be made to have the form ofsponges. During the post-CMP cleaning process, wafer 18 is rotated, forexample, as illustrated by arrow 34. In the meantime, brush 32 alsorotates with respective to its own axis. The axis of brush 32 is in thelengthwise directions of the brush 32, and is parallel to the surface ofwafer 18. Brush 32 has a cylindrical shape. Also, when viewed from rightas shown in FIG. 2, the cross-sectional view of each of brush 32 iscircular, and hence when brush 32 rotates, residues are removed from thesurface of wafer 18.

During the cleaning, chemical solution (referred to as cleaning solutionhereinafter) 36 is sprayed onto the surface of wafer 18. Cleaningsolution 36 may include various types, and different types of cleaningsolution 36 may be used to clean different residues on wafers. Inaccordance with some embodiments, cleaning solution 36 includes an acidchemical solution, which may include an organic acid such as citricacid, an inorganic acid such as HNO₃, or the like. In accordance withsome embodiments, cleaning solution 36 includes an alkaline chemicalsolution, which may include an organic base such as NR₃ (with R beingalkyl), an inorganic base such as NH₄OH, or the like. Surfactants suchas sodium dodecyl sulfate may be added into cleaning solution 36 toreduce the surface tension of cleaning solution 36. Cleaning solution 36may include water as a solvent. Cleaning solution 36 may also useorganic solvents such as methanol. Cleaning solution 36 may also be anaqueous solution including peroxide. For example, cleaning solution 36may include H₂O₂ in water. With the rotation of wafer 18, cleaningsolution 36 is rolled into brush 32, which uses cleaning solution 36 toclean the surface of wafer 18 when brush 32 rotates. The selection ofchemical solution 36 depends on the surface properties of wafer 18 suchas the type of material that are expose on the surface, so that cleaningsolution is able to clean the surface, and will not damage the surface.The selection of chemical solution 36 is also related to the substancesused in the CMP such as the type of slurry.

FIG. 3 illustrates the rinse of wafer 18 after the cleaning usingchemical solution 36. In accordance with some embodiment, wafer 18 isrinsed using DI water 38, which is sprayed onto wafer 18 by dispenser40. During the rinse, wafer 18 is also rotated, and waste water 44generated by the rinsing is spun off from wafer 18, and conducted awayfrom the CMP cleaning apparatus 30.

It is appreciated that during the rinse of wafer 18, the residue such asslurry and the substance polished from wafer will be gradually removedwith the proceeding of the rinsing. Furthermore, during the post-CMPcleaning, the material of brush 32 may also break apart from brush 32and fall on wafer 18, and will be removed. With the proceeding of therinsing, wafer 18 becomes cleaner and cleaner until at some point, thecleanness of wafer 18 is within specification, which means that theamount of the remaining residue (if any) including the particles,fall-ons, and organic materials on the surface of wafer 18 is smallerthan a pre-determined acceptable amount, and the sizes of the remainingresidue (if any) are also smaller than a pre-determined acceptable size.

FIG. 4 illustrates an apparatus and a process for determining/check thecleanness of wafer 18. The respective step is shown as step 506 in theprocess flow shown in FIG. 17. It is expected that with the proceedingof the rinse, the waste water becomes cleaner and cleaner. The cleannessof the waste water hence reflects the cleanness of wafer 18, and thecleanness of the waste water is used to determining whether wafer 18 isclean enough. As shown in FIG. 4, CMP cleaning apparatus 30 isillustrated schematically using a box. A conduit is connected to CMPcleaning apparatus 30, and waste water 44 flows through the conduit.

In accordance with some embodiments of the present disclosure, valves 45and 46 are connected to conduit 42. Valve 45 is connected to conduit 48,which includes transparent cell 50. Transparent cell 50 is transparentto light such as laser, and the light can pass through. Conduit 48 isfurther connected to waste water collecting unit 52. Valve 46 isconnected to waste water collecting unit 52 with no transparent celltherebetween.

In an initial stage of the rinse process, waste water 44 includes asignificant amount of the residue rinsed off from wafer 18. At thistime, valve 46 is opened, and waste water 44 flows directly to wastewater collecting unit 52. In the meantime, valve 45 is turned off, andhence waste water 44 does not flow through transparent cell 50. Assumingthe rinse process starts at time T1, after delaying a pre-determinedperiod of time ΔT from T1, and at time T2, valve 46 is turned off, andvalve 45 is opened. Accordingly, waste water 44 flows through valve 45,transparent cell 50, and is collected by waste water collecting unit 52.The time point T2 is determined so that rinsing duration ΔT, which isequal to (T2−T1), is expected to be long enough for wafer 18 to becleaned within specification. Accordingly, it is expected that at timepoint T2, waste water 44 is clean enough.

In accordance with some embodiments, rinsing duration ΔT ispre-determined before the CMP of wafer 18. The determination of rinsingduration ΔT may include performing CMP on a plurality of sample wafers(not shown) that are identical to wafer 18, performing post-CMP cleaning(using the chemical solution) on the sample wafers, and then rinsing thesample wafers. All the sample wafers may be polished using the same CMPprocess conditions and the same post-CMP cleaning conditions. Therinsing durations, however, are different from each other for the samplewafers. Accordingly, by examining the cleanness of the sample wafers,the optimal rinsing duration ΔT can be found, wherein all wafers rinsedfor rinsing duration ΔT or longer are acceptably clean (withinspecification). The wafers rinsed significantly shorter than rinsingduration ΔT are not clean enough (the cleanness is outside of thespecification), and the wafers rinsed for periods of time shorter than,but close to, rinsing duration ΔT may or may not be clean enough.

At time point T2, with waste water 44 flowing through transparent cell50, the number and sizes of particles in waste water 44 are determinedusing Laser Particle Counter (LPC) 66. Laser particle counter 66includes laser generating unit 54 for generating laser beam 56, which isprojected onto transparent cell 50. Lens 58 is placed behind transparentcell 50. Detector 60 is further placed behind lens 58 for receivinglaser beam 56. When no undesirable substance is in transparent cell 50and in the path of laser beam 56, detector 60 receives laser beam 56.When there is a particle in the path of laser beam 56, laser beam 56 isblocked and hence is not received by detector 60. The blocking durationsreflects the size of the particles. Accordingly, the number of particlespassing through the path of laser beam 56 determines how many timeslaser beam 56 is blocked, and the size of a particle determines how longlaser beam 56 is blocked. Processing unit 64 is connected to detector60, receives the signal collected by detector 60, and calculates thenumber and sizes of the particles.

In accordance with some embodiments of the present disclosure, apre-determined criteria is used by processing unit 64 to determinewhether waste water 44 (and wafer 18) is clean or not. The respectivestep is shown as step 508 in the process flow shown in FIG. 17. Forexample, the criteria may be the detected number (found in a unit oftime) of particles that have sizes larger than a pre-determined sizeneeds to be smaller than a pre-selected number. For example, waste water44 is clean when in a second, the detected number particles that arelarger than 500 nm is smaller than 5. If the criteria is met, the rinseis finished. Otherwise, the waste water 44 is determined as not clean,which means the surface of wafer 18 is not clean. Accordingly, the rinseneeds to be prolonged. During the prolonged rinse period, waste water 44remains to be checked periodically, until the criteria is met. At whichtime, the rinse process is finished. In accordance with someembodiments, if waste water 44 is not clean, the cleaning using chemicalsolution (FIG. 2) and the rinse are both repeated.

FIG. 5 illustrates determining the number and sizes of particles usingDynamic Laser Scattering (DLS), which is used to analyze the fluctuationof the intensity of the scattered light to determine the numbers and thesizes of particles in waste water 44. The process and the apparatus fordetermining the cleanness of wafer 18 is essentially the same as theembodiment shown in FIG. 4, except DLS (rather than LPC) is used. Inthese embodiments, the detector 60 is not in the direct path of laserbeam 56. The DLS and LPC are known in the art, and hence the details arenot repeated herein.

After wafer 18 is determined as clean, wafer 18 is dried, for example,using a mixture of isopropanol and nitrogen (N₂). The respective step isshown as step 510 in the process flow shown in FIG. 17. After wafer 18is dried, a further check may be made to determine whether wafer 18 isclean or not before wafer 18 is sent out of the CMP station. Therespective step is shown as step 512 in the process flow shown in FIG.17. If wafer 18 is clean (step 514), wafer 18 is sent out of the CMPpost-CMP apparatus 30, and a subsequent wafer is sent in for the CMP andthe post-CMP cleaning (step 516). Valve 45 is turned off, and valve 46is opened for the CMP and the post-CMP cleaning of the next wafer.

FIGS. 6, 8, 10, and 12 illustrate a plurality of methods for determiningthe cleanness of wafer 18 using optical analysis. It is noted that oneor more of these methods may be combined with one or more of the methodsshown in FIGS. 4, 5, and 15. FIG. 6 illustrates a process fordetermining cleanness of wafer 18 using Fourier Transform InfraredSpectroscopy (FTIR). Infrared source 68 generates infrared light 70, andprojects light 70 onto wafer 18. The reflected infrared light 70 isreceived by detecting unit 72, which provides the received light signalto processing unit 74 to generate a FTIR spectrum. The materials on thesurface of wafer 18 result in the light of different frequencies to beabsorbed, and hence the resulting FTIR spectrum has characteristic peaksin response to different materials. For example, FIG. 7A illustrates thecharacteristic peaks of water (H₂O), and FIG. 7B illustrates thecharacteristic peaks of silicon oxide (SiO₂). When multiple types ofmaterials are present at the surface of wafer 18, the combination of thecharacteristic peaks of the multiple materials will present in therespective FTIR spectrum. The FTIR spectrum in accordance with someembodiments covers the wavenumber ranging from 250 to 4,000 cm⁻¹.

Process unit 74 receives the signal from detecting unit 72, generatesthe FTIR spectrum, and compares the characteristic peaks in the FTIRspectrum with a database, which stores the data of the characteristicpeaks of a plurality of materials that may possibly present on thesurface of wafer 18. When characteristic peaks of a material(s) arefound in the FTIR spectrum, processing unit 74 determines that therespective materials are present on the surface of wafer 18. Forexample, the characteristic peaks of SiO₂ are at 2,366, 1,377, 1,463,2,855, 2,924, and 2,964 (all have unit of cm⁻¹ and with variation ±10cm⁻¹). The characteristic peaks of Al₂O₃ are at 2,855, 2,924, and 2,964(all have unit of cm⁻¹ and with variation ±10 cm⁻¹). The characteristicpeaks of BTA are at 742, 753, 779, 1,009, 1,023, 1,210, 2,766, 2,796,and 2,870 (all have unit of cm⁻¹ and with variation ±10 cm). Thecharacteristic peaks of PVA are at 1,098, 1,145, 1,239, 1,334, 1,497,1,442, 1,661, 1,711, 2,837, 2,906, 2,923, and 2,945 (all have unit ofcm⁻¹ and with variation ±10 cm⁻¹). The characteristic peaks of PVC areat 612, 890, 835, 966, 1,098, 1,199, 1,254, 1,333, 1,428, 1,435, 2,913,and 2,970 (all have unit of cm⁻¹ and with variation ±10 cm). Thecharacteristic peaks of silicon nitride (Si₃N₄) are at 1,377, 1,463,2,852, 2,910, 2,921 (all have unit of cm⁻¹ and with variation ±10 cm⁻¹).

When using FTIR to determine whether wafer 18 is clean, thecharacteristic peaks of water and carbon dioxide are excluded, whichmeans the presence of the characteristic peaks of water and carbondioxide does not necessarily mean wafer 18 is not clean. Thecharacteristic peaks of water are at 1,640, 2,130, and 3,000˜3600 (allhave unit of cm⁻¹ and with variation ±10 cm⁻¹). The characteristic peaksof carbon dioxide are at 665±10 cm⁻¹, 2,280±10 cm⁻¹, and 2,350±20 cm⁻¹.If the characteristic peaks of some materials that should not be at thesurface material of wafer 18 are found, it indicates residue has beenfound. For example, BTA, PVA, or PVC is the material of brush 32 (FIG.2), and when the characteristic peaks of these materials are found inthe FTIR spectrum, it indicates the particles fell from brush 32 is notcleaned. Aluminum oxide and silicon oxide may be the abrasive of slurry,and if their characteristic peaks are in the FTIR spectrum, and theintended surface material of wafer 18 does not include these materials,it indicates the slurry is not cleaned, and wafer 18 needs to be cleanedagain.

FIG. 8 illustrates determining the cleanness of the surface of wafer 18using Raman spectrum in accordance with some embodiments. Laser source168 generates laser 170, and projects laser 170 onto wafer 18. Thereflected laser 170 is received by detecting unit 172 and processingunit 174, which generates a Raman spectrum. The materials on the surfaceof wafer 18 result in the resulting Raman spectrum to have a pluralityof characteristic peaks. For example, FIG. 9A illustrates thecharacteristic peaks of PVA, and FIG. 9B illustrates the characteristicpeaks of silicon. When multiple types of materials are present at thesurface of wafer 18, the combination of the characteristic peaks of therespective materials will present in the respective Raman spectrum. TheRaman spectrum covers the wavenumber ranging from 250 to 4,000 cm⁻¹.

When using Raman spectrum to determine whether wafer 18 is clean, thecharacteristic peaks of water are excluded. The characteristic peaks ofwater are at 1,640, 3,420, and 3,630 (all have unit of cm⁻¹ and withvariation ±10 cm⁻¹). The characteristic peak of Si is at 520±10 cm⁻¹.The characteristic peaks of Al₂O₃ are at 383 and 421 (all have unit ofcm⁻¹ and with variation ±10 cm⁻¹). The characteristic peaks of BTA areat 533, 796, 1,039, 1,425, 1,567, 1,752, 1,870, 3,303, and 3,330 (allhave unit of cm⁻¹ and with variation ±10 cm⁻¹). The characteristic peaksof PVA are at 633, 887, 1,023, 1,145, 1,445, 1,733, 2,940, and 2,973(all have unit of cm⁻¹ and with variation ±10 cm⁻¹). The characteristicpeaks of PVC are at 360, 634, 693, 962, 1,108, 1,175, and 1,253 (allhave unit of cm⁻¹ and with variation ±10 cm⁻¹). The characteristic peaksof silicon nitride (Si₃N₄) are at 465, 512, 826, and 860 (all have unitof cm⁻¹ and with variation ±10 cm⁻¹).

Process unit 174 receives the signal from detecting unit 172, generatesthe Raman spectrum, and compares the characteristic peaks of the Ramanspectrum with a database, which stores the data of the characteristicpeaks of a plurality of materials that may possibly present on thesurface of wafer 18. The determination of the cleanness using thecharacteristic peaks of Raman spectrum is similar to using FTIRspectrum, and hence is not repeated herein. If wafer 18 is found notclean, it will be cleaned again, as shown by step 514 in FIG. 17.

In accordance with some embodiments of the present disclosure,spectrometer is used to measure the reflectance, transmittance, and thepolarization state of a light, and to determine the cleanness of wafer18. The wavelength that may be used for determining the cleanness ofwafers may be in the range between about 300 nm and about 1,100 nm.Referring to FIG. 10, light source 268 generates light 270. Diffractiongrating 269 deflects light 270 as deflected light 271, which isprojected onto wafer 18. The deflected light 271 is received bydetecting unit 272 and processing unit 274, which generates a graphshowing the transmittance and reflectance of the surface material of themeasured wafer. For example, FIG. 11 illustrates the transmittance ofsilicon as line 76, and the reflectance of silicon as line 78. If theintended surface material of wafer 18 has residues, the transmittanceand reflectance will reflect the respective residues.

In accordance with some embodiments of the present disclosure, a cleanwafer (which is identical to wafer 18) may be measured usingspectrometer to generate respective reference transmittance andreflectance. If residues are present at the surface of wafer 18, thetransmittance and reflectance will deviate from the referencetransmittance and reflectance, and hence comparing the transmittance andreflectance of wafer 18 with the reference transmittance and reflectancewill reveal whether residue exists or not. For example, if an organicresidue it present on the surface of wafer 18, the respectivereflectance value will be lower than the reference reflectance valuesince the organic residue may absorb some of the light or lead to morescattering.

In accordance with some embodiments of the present disclosure,ellipsometry is used to evaluate the complex dielectric function of thinfilms, and to determine the cleanness of wafer 18. Referring to FIG. 12,light source 368 generates light 370, which passes through polarizer369, reflects from wafer 18, passes through analyzer 371, and isreceived by detecting unit 372 and processing unit 374. Processing unit374 generates a graph showing the ψ parameter (amplitude) and the Δparameter (phase difference) of the respective complex reflectance ratioρ. The wavelength that may be used for determining the cleanness inaccordance with some embodiments may be in the range from about 200 nmto about 1,600 nm.

For example, FIG. 13A illustrates the amplitude ψ of silicon (line 400),the amplitude ψ of silicon polluted with a first residue A (line 402),the amplitude ψ of silicon polluted with a second residue B (line 404),and the amplitude ψ of a metal film (line 406). FIG. 13B illustrates thephase difference Δ of silicon (line 410), the phase difference Δ ofsilicon polluted with the first residue A (line 412), the phasedifference Δ of silicon polluted with the second residue B (line 414),and the phase difference Δ of the metal film (line 416). It is shown inFIGS. 13A and 13B that with the change of the materials and the residue,the amplitude and the phase difference (in combination referred to thecomplex dielectric function) change accordingly, and hence the amplitudeand the phase difference may indicate what materials are present on thesurface of wafer.

In accordance with some embodiments of the present disclosure, a cleanwafer (identical to wafer 18) may be measured using ellipsometry togenerate a reference complex dielectric function. If residues arepresent at the surface of wafer 18, the complex dielectric function willdeviate from the reference complex dielectric function, and hencecomparing the complex dielectric function of wafer 18 with the referencecomplex dielectric function will reveal whether residue exist or not.

In accordance with some embodiments of the present disclosure, thesurface charge on the surface of wafer 18 is measured, and the result isused to determine the cleanness of wafer 18. Referring to FIG. 15,voltmeter 80 is connected to probes 82 (including 82A and 82B) that arein contact with the surface of wafer 18. Probes 82 are in contact withdifferent portions of wafer 18. For example, probe 82A may be in contactwith the center of the top surface of wafer 18, and probe 82B may be incontact with the edge of the top surface of wafer 18. A voltage is readfrom voltmeter 80. In accordance with some embodiments, the voltage isused to determine the cleanness of a wafer whose entire top surface isformed of a same material such as silicon, a metal, a dielectricmaterial, etc.

FIGS. 16A and 16B schematically illustrate that the surface charges ofwafer 18 may be changed due to the cleanness of wafer 18, and theresulting voltage read from voltmeter 80 changes accordingly. Forexample, referring to FIG. 16A, when a clean wafer 18 is probed,voltmeter will have the result of 0 volt (or within ±ΔV, which is causedby variation) since the two terminals 82A and 82B are in contact withsurface regions 18A1 and 18A2 that have the same surface conditions. Forexample, in FIG. 16A, the surface charges of both regions 18A1 and 18A2,which are in contact with probes 82A and 82B, are both clean and havepositive charges accumulated. The voltage read from voltmeter 80 is thuswithin ±ΔV. If surface conditions of regions 18A1 and 18A2 are differentfrom each other due to one or both regions 18A1 and 18A2 have residues,then the surface charges may change, resulting in the result ofvoltmeter 80 to be out of the range ±ΔV. For example, in the exampleshown in FIG. 16B, due to the existence of residue 84, negative chargesare accumulated in region 18A2, causing a voltage difference betweensurface regions 18A1 and 18A2. Accordingly, voltmeter 80 will read avoltage having an amplitude greater than the variation ±ΔV, indicatingthe wafer 18 is not clean.

In the embodiments as shown in FIGS. 4 through 16B, when wafer 18 isfound not clean, wafer 18 may go through the steps shown in FIGS. 2 and3 again, as shown by step 514 in the process flow in FIG. 17. When wafer18 is being checked for cleanness, other wafers are blocked, and nopost-CMP cleaning is performed on the subsequent wafers, until wafer 18is eventually determined as clean. Otherwise, if wafer 18 is found to beclean, the post-CMP is finished, and next wafer may be sent in for thepost-CMP (step 516). Furthermore, if a plurality of wafers 18 is foundto be not clean, the cleaning process may be adjusted, for example, thechemical solution clean and/or the rinsing process may be prolonged.

The embodiments of the present disclosure have some advantageousfeatures. The determining of the cleanness of the wafer ensures that thewafer sent out of the CMP station is clean. In conventional post-CMPcleanness, a wafer may be taken out of the post-CMP apparatus forinspection. When the inspection is finished and it is determined thatthe wafer is not clean, a plurality of other wafers may have alreadyundertaken the CMP process and the post-CMP cleaning, and may have beentransported away, even if these wafers are not clean.

In accordance with some embodiments of the present disclosure, a methodincludes performing CMP on a wafer, placing the wafer on a chuck,performing a post-CMP cleaning on the wafer, and determining cleannessof the wafer when the wafer is located on the chuck.

In accordance with some embodiments of the present disclosure, a methodincludes performing CMP on a wafer, performing a post-CMP cleaning onthe wafer using a chemical solution, rinsing the wafer with water, anddetermining cleanness of the wafer by checking waste water generated inthe rinsing the wafer.

In accordance with some embodiments of the present disclosure, a methodincludes performing CMP on a wafer, performing a post-CMP cleaning onthe wafer using a chemical solution, rinsing the wafer with water,drying the wafer, and after the drying the wafer, determining cleannessof the wafer by generating an FTIR spectrum or a Raman spectrum from thewafer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method comprising: performing a ChemicalMechanical Polish (CMP) process on a wafer; performing a post-CMPcleaning process on the wafer using a chemical solution; rinsing thewafer with water; drying the wafer; and after the drying the wafer,determining cleanness of the wafer by generating a Fourier TransformInfrared Spectroscopy (FTIR) spectrum or a Raman spectrum from thewafer.
 2. The method of claim 1, wherein the determining cleanness ofthe wafer comprises comparing characteristic peaks of the FTIR spectrumor the Raman spectrum with characteristic peaks stored in a database tofind a material of a brush used in the post-CMP cleaning process.
 3. Themethod of claim 2, wherein the determining cleanness of the waferfurther comprises comparing characteristic peaks of the FTIR spectrum orthe Raman spectrum with characteristic peaks of aluminum oxide.
 4. Themethod of claim 2, wherein the determining cleanness of the wafercomprises comparing characteristic peaks of the FTIR spectrum or theRaman spectrum with characteristic peaks of Polyvinyl Alcohol (PVA). 5.The method of claim 2, wherein the determining cleanness of the wafercomprises comparing characteristic peaks of the FTIR spectrum or theRaman spectrum with characteristic peaks of the material of the brushthat comprises Polyvinyl chloride (PVC).
 6. The method of claim 2,wherein the determining cleanness of the wafer comprises comparingcharacteristic peaks of the FTIR spectrum or the Raman spectrum withcharacteristic peaks of the material of the brush that comprisesBenzotriazole (BTA).
 7. The method of claim 1, wherein the determiningcleanness of the wafer comprises generating the FTIR spectrum.
 8. Themethod of claim 7 further comprising: projecting an infrared light onthe wafer; receiving a reflected light reflected from the wafer into adetecting unit; and providing the reflected light to a processing unitto generate the FTIR spectrum.
 9. The method of claim 1, wherein thedetermining cleanness of the wafer comprises generating the Ramanspectrum.
 10. The method of claim 9 further comprising: projecting alaser beam on the wafer; receiving a reflected laser beam reflected fromthe wafer into a detecting unit; and providing the reflected laser beamto generate the Raman spectrum.
 11. A method comprising: performing aChemical Mechanical Polish (CMP) process on a wafer; performing apost-CMP cleaning process on the wafer using a brush; rinsing the waferwith water; projecting an infrared light on a surface of the wafer togenerate a reflected infrared light; generating a Fourier TransformInfrared Spectroscopy (FTIR) spectrum from the reflected infrared light;and comparing characteristic peaks in the FTIR spectrum with storedcharacteristic peaks to determine materials left on the surface of thewafer, wherein the determined materials comprise a material of thebrush.
 12. The method of claim 11, wherein characteristic peaks of waterin the FTIR spectrum are excluded when the characteristic peaks in theFTIR spectrum are compared to the stored characteristic peaks.
 13. Themethod of claim 11, wherein characteristic peaks of carbon dioxide inthe FTIR spectrum are excluded when the characteristic peaks in the FTIRspectrum are compared to the stored characteristic peaks.
 14. The methodof claim 11, wherein the infrared light is projected on the wafer in adirection not perpendicular to the surface of the wafer.
 15. A methodcomprising: performing a Chemical Mechanical Polish (CMP) process on awafer using a slurry; performing a post-CMP cleaning process on thewafer using a brush; drying the wafer; and finding a material of thebrush on a surface of the wafer to determine cleanness of the surface ofthe wafer.
 16. The method of claim 15, wherein the finding the materialfurther comprises finding the material in the slurry.
 17. The method ofclaim 15, wherein the finding the material comprises: projecting aninfrared light on a surface of the wafer to generate a reflectedinfrared light; generating a Fourier Transform Infrared Spectroscopy(FTIR) spectrum from the reflected infrared light; and comparingcharacteristic peaks in the FTIR spectrum with stored characteristicpeaks of the material in the brush.
 18. The method of claim 15, whereinthe finding the material comprises: projecting a laser beam on a surfaceof the wafer to generate a reflected laser beam; generating a spectrumfrom the reflected laser beam; and comparing characteristic peaks in thespectrum with stored characteristic peaks of the material of the brush.19. The method of claim 15, wherein the material of the brush comprisesPolyvinyl Alcohol (PVA), Polyvinyl chloride (PVC), or Benzotriazole(BTA).
 20. The method of claim 2, wherein the brush contacts the wafer,and is rotated in the post-CMP cleaning process.